Vanishing influence of the band gap on the charge exchange of slow highly charged ions in freestanding single-layer MoS<sub>2</sub>
- Author(s)
- S. Creutzburg, J. Schwestka, A. Niggas, H. Inani, M. Tripathi, A. George, R. Heller, R. Kozubek, L. Madauss, N. McEvoy, S. Facsko, J. Kotakoski, M. Schleberger, A. Turchanin, P. L. Grande, F. Aumayr, R. A. Wilhelm
- Organisation(s)
- Physics of Nanostructured Materials
- External organisation(s)
- Helmholtz-Zentrum Dresden-Rossendorf, Technische Universität Dresden, Technische Universität Wien, Friedrich-Schiller-Universität Jena, Universität Duisburg-Essen, University of Dublin, Universidade Federal do Rio Grande do Sul
- Journal
- Physical Review B
- Volume
- 102
- No. of pages
- 8
- ISSN
- 2469-9950
- DOI
- https://doi.org/10.1103/PhysRevB.102.045408
- Publication date
- 07-2020
- Peer reviewed
- Yes
- Austrian Fields of Science 2012
- 103015 Condensed matter, 103018 Materials physics
- Keywords
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Condensed Matter Physics
- Portal url
- https://ucrisportal.univie.ac.at/en/publications/vanishing-influence-of-the-band-gap-on-the-charge-exchange-of-slow-highly-charged-ions-in-freestanding-singlelayer-mos2(089161d9-dd88-48a3-b267-13e883f3a2e5).html