High-performance field-effect transistors with semiconducting-rich single-walled carbon nanotube bundle

Author(s)
Abu Taher Khan, Nan Wei, Otto Salmela, Kimmo Mustonen, Yongping Liao, Aqeel Hussain, Er Xiong Ding, Md Gius Uddin, Hua Jiang, Yutaka Ohno, Esko I. Kauppinen
Abstract

Single-walled carbon nanotubes (SWCNTs), typically produced as bundles in floating catalyst chemical vapor deposition (FC-CVD), exhibit exceptional electronic properties, making them highly promising for high-performance electronics. This work examines the transport characteristics and electrical performance of field-effect transistors (FETs) fabricated from two high crystalline SWCNT bundle types: Small Bundle Small Diameter (SBSD) and Large Bundle Large Diameter (LBLD). SBSD and LBLD SWCNT bundles, synthesized via FC-CVD, had mean bundle diameters of 4.1 nm and 7.1 nm, and mean tube diameters of 1.4 nm and 1.9 nm, respectively. Despite electron diffraction revealing metallic fractions of 38 % for SBSD and 46.3 % for LBLD, interestingly a higher-than-expected fraction of FETs with 71.5 % for SBSD and 62 % for LBLD, demonstrated semiconducting behavior. Single SBSD SWCNT FETs achieved a mean charge carrier mobility of 2817 cm2V–1S−1, while single LBLD SWCNT FETs reached a mean value of 5378 cm2V–1S−1, among the highest reported. The mean mobility in single junction FETs decreased about fourfold to 737 cm2V−1s−1 for SBSD and threefold to 1732 cm2V−1s−1 for LBLD, compared to the single bundle FET. Both SBSD and LBLD SWCNT FETs achieved on-off ratios up to 108, highlighting their potential for advanced electronic applications.

Organisation(s)
Physics of Nanostructured Materials
External organisation(s)
Aalto University, Peking University, Dalian Polytechnic University, Nagoya University
Journal
Carbon
Volume
239
No. of pages
8
ISSN
0008-6223
DOI
https://doi.org/10.1016/j.carbon.2025.120320
Publication date
05-2025
Peer reviewed
Yes
Austrian Fields of Science 2012
103011 Semiconductor physics, 210004 Nanomaterials
Keywords
ASJC Scopus subject areas
General Chemistry, General Materials Science
Portal url
https://ucrisportal.univie.ac.at/en/publications/5e268ffe-fe3a-4604-96d6-d63dd0997862