High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature
- Author(s)
- Chanyoung Yim, Kangho Lee, Niall McEvoy, Maria O'Brien, Sarah Riazimehr, Nina C. Berner, Conor P. Cullen, Jani Kotakoski, Jannik C. Meyer, Max C. Lemme, Georg S. Duesberg
- Abstract
Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe
2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermally assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this material with silicon (Si) technology. Besides the thorough characterization of this 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically stacked heterostructures of PtSe
2 on Si which act as both photodiodes and photovoltaic cells. Thus, this study establishes PtSe
2 as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.
- Organisation(s)
- Physics of Nanostructured Materials
- External organisation(s)
- University of Dublin, Universität Siegen
- Journal
- ACS Nano
- Volume
- 10
- Pages
- 9550-9558
- No. of pages
- 9
- ISSN
- 1936-0851
- Publication date
- 10-2016
- Peer reviewed
- Yes
- Austrian Fields of Science 2012
- 103018 Materials physics
- Keywords
- ASJC Scopus subject areas
- Engineering(all), Physics and Astronomy(all), Materials Science(all)
- Sustainable Development Goals
- SDG 7 - Affordable and Clean Energy
- Portal url
- https://ucris.univie.ac.at/portal/en/publications/highperformance-hybrid-electronic-devices-from-layered-ptse2-films-grown-at-low-temperature(c6ddd856-dae3-4aa0-a5d2-edf69c40b323).html