Tuning the orientation of few-layer MoS2 films using one-zone sulfurization

Author(s)
Michaela Sojkova, Karol Vegso, Nada Mrkyvkova, Jakub Hagara, Peter Hutar, Alica Rosova, Maria Caplovicova, Ursula Ludacka, Viera Skakalova, Eva Majkova, Peter Siffalovic, Martin Hulman
Abstract

Few-layer MoS2 films are promising candidates for applications in numerous areas, such as photovoltaics, photocatalysis, nanotribology, lithium batteries, hydro-desulfurization catalysis and dry lubricants, especially due to their distinctive electronic, optical, and catalytic properties. In general, two alignments of MoS2 layers are possible - the horizontal and the vertical one, having different physicochemical properties. Layers of both orientations are conventionally fabricated by a sulfurization of pre-deposited Mo films. So far, the Mo thickness was considered as a critical parameter influencing the final orientation of MoS2 layers with horizontally and vertically aligned MoS2 grown from thin (1 nm) and thick (3 nm) Mo films, respectively. Here, we present a fabrication protocol enabling the growth of horizontally or vertically aligned few-layer MoS2 films utilizing the same Mo thickness of 3 nm. We show that the sulfur vapor is another parameter influencing the growth mechanism, where a sulfurization with higher sulfur vapor pressure leads to vertical MoS2 layers and slow sulfur evaporation results in horizontally aligned layers for a thicker Mo starting layer.

Organisation(s)
Physics of Nanostructured Materials
External organisation(s)
Slovak University of Technology in Bratislava, Slovak Academy of Sciences (SAS)
Journal
RSC Advances
Volume
9
Pages
29645-29651
No. of pages
7
ISSN
2046-2069
DOI
https://doi.org/10.1039/c9ra06770a
Publication date
09-2019
Peer reviewed
Yes
Austrian Fields of Science 2012
Nanomaterials, Materials physics
Keywords
Portal url
https://ucris.univie.ac.at/portal/en/publications/tuning-the-orientation-of-fewlayer-mos2-films-using-onezone-sulfurization(b09eb635-5bcf-4f53-a926-2386efff63be).html