Highly stable amorphous zinc tin oxynitride thin film transistors under positive bias stress

Author(s)
K. M. Niang, B. C. Bayer, J. C. Meyer, A. J. Flewitt
Organisation(s)
Physics of Nanostructured Materials
Journal
Applied Physics Letters
Volume
111
No. of pages
5
ISSN
0003-6951
DOI
https://doi.org/10.1063/1.5004514
Publication date
09-2017
Publication status
Published
Peer reviewed
Yes
Austrian Fields of Science 2012
103018 Materials physics
Keywords
OXIDE, STABILITY, MOBILITY, SILICON, ZNON
Portal url
https://ucris.univie.ac.at/portal/en/publications/highly-stable-amorphous-zinc-tin-oxynitride-thin-film-transistors-under-positive-bias-stress(6d56107e-5998-478c-b76f-fc53c21f3608).html