Exclusive Substitutional Nitrogen Doping on Graphene Decoupled from an Insulating Substrate

Author(s)
Juan Carlos Moreno-Lopez, Filippo Fedi, Giacomo Argentero, Marco Carini, Johnny Chimborazo, Jannik Meyer, Thomas Pichler, Aurelio Mateo-Alonso, Paola Ayala
Abstract

The on-surface synthesis of atomically flat N-doped graphene on oxidized copper is presented. Besides circumventing the almost standard use of metallic substrates for growth, this method allows producing graphene with similar to 2.0 at % N in a substitutional configuration directly decoupled from the substrate. Angle-resolved photoemission shows a linear energy-momentum dispersion where the Dirac point lies at the Fermi level. Additionally, the N functional centers can be selectively tailored in sp(2) substitutional configuration by making use of a purpose-made molecular precursor: dicyanopyrazophenanthroline (C16H6N6).

Organisation(s)
Electronic Properties of Materials, Physics of Nanostructured Materials
External organisation(s)
University of the Basque Country, Ikerbasque Basque Foundation for Science
Journal
Journal of Physical Chemistry C
Volume
124
Pages
22150-22157
No. of pages
8
ISSN
1932-7447
DOI
https://doi.org/10.1021/acs.jpcc.0c06415
Publication date
10-2020
Peer reviewed
Yes
Austrian Fields of Science 2012
104017 Physical chemistry, 103018 Materials physics
Keywords
Portal url
https://ucris.univie.ac.at/portal/en/publications/exclusive-substitutional-nitrogen-doping-on-graphene-decoupled-from-an-insulating-substrate(60324d83-9282-446b-9dcd-55513bda7fb2).html