Defect engineering of single- and few-layer MoS2 by swift heavy ion irradiation

Author(s)
Lukas Madauß, Oliver Ochedowski, Henning Lebius, Brigitte Ban-d'Etat, Carl H. Naylor, A T Charlie Johnson, Jani Kotakoski, Marika Schleberger
Abstract

We have investigated the possibility to use swift heavy ion irradiation

for nano-structuring supported and freestanding ultra-thin MoS2 samples. Our comprehensive study of the ion-induced morphological changes in various MoS2

samples shows that depending on the irradiation parameters a multitude

of extended defects can be fabricated. These range from chains of

nano-hillocks in bulk-like MoS2, and foldings in single and bilayer MoS2, to unique nano-incisions in supported and freestanding single layers of MoS2.

Our data reveals that the primary mechanism responsible for the

incisions in the ultrathin supported samples is the indirect heating by

the SiO2 substrate. We thus conclude that an energy of less

than 2 keV per nm track length is sufficient to fabricate nano-incisions

in MoS2 which is compatible with the use of the smallest accelerators.

Organisation(s)
Physics of Nanostructured Materials
Journal
2D Materials
Volume
4
No. of pages
10
ISSN
2053-1583
DOI
https://doi.org/10.1088/2053-1583/4/1/015034
Publication date
12-2016
Publication status
E-pub ahead of print
Peer reviewed
Yes
Austrian Fields of Science 2012
103009 Solid state physics
Portal url
https://ucris.univie.ac.at/portal/en/publications/defect-engineering-of-single-and-fewlayer-mos2-by-swift-heavy-ion-irradiation(1102b6d6-2fd0-49cc-80d5-a401f09935e4).html