Xe irradiation of graphene on Ir(111): From trapping to blistering

Author(s)
Charlotte Herbig, E. Harriet Ahlgren, Ulrike A. Schroeder, Antonio J. Martinez-Galera, Mohammad A. Arman, Jani Kotakoski, Jan Knudsen, Arkady V. Krasheninnikov, Thomas Michely
Abstract

Using x-ray photoelectron spectroscopy, thermal desorption spectroscopy, and scanning tunneling microscopy, we show that upon keV Xe+ irradiation of graphene on Ir(111), Xe atoms are trapped under the graphene. Upon annealing, aggregation of Xe leads to graphene bulges and blisters. The efficient trapping is an unexpected and remarkable phenomenon given the absence of chemical binding of Xe to Ir and to graphene, the weak interaction of a perfect graphene layer with Ir(111), as well as the substantial damage to graphene due to irradiation. By combining molecular dynamics simulations and density functional theory calculations with our experiments, we uncover the mechanism of trapping. We describe ways to avoid blister formation during graphene growth, and also demonstrate how ion implantation can be used to intentionally create blisters without introducing damage to the graphene layer. Our approach may provide a pathway to synthesize new materials at a substrate-2D material interface or to enable confined reactions at high pressures and temperatures.

Organisation(s)
Physics of Nanostructured Materials
External organisation(s)
Universität zu Köln, University of Helsinki, Lund University, Helmholtz-Zentrum Dresden-Rossendorf, Aalto University
Journal
Physical Review B
Volume
92
No. of pages
9
ISSN
1098-0121
Publication date
08-2015
Peer reviewed
Yes
Austrian Fields of Science 2012
103015 Condensed matter
Keywords
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Portal url
https://ucris.univie.ac.at/portal/en/publications/xe-irradiation-of-graphene-on-ir111-from-trapping-to-blistering(c28dff6b-581f-4a50-a9b8-ee0903127f7e).html