Silicon-Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
- Author(s)
- Toma Susi, Jani Kotakoski, Demie Kepaptsoglou, Clemens Mangler, Tracy C. Lovejoy, Ondrej L. Krivanek, Recep Zan, Ursel Bangert, Paola Ayala, Jannik C. Meyer, Quentin Ramasse
- Abstract
We demonstrate that 60-keV electron irradiation drives the diffusion of threefold-coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of nondestructive and atomically precise structural modification and detection for two-dimensional materials.
- Organisation(s)
- Electronic Properties of Materials, Physics of Nanostructured Materials
- External organisation(s)
- University of Helsinki, SuperSTEM Daresbury, Nion Co, University of Manchester, Niğde University, University of Limerick
- Journal
- Physical Review Letters
- Volume
- 113
- No. of pages
- 5
- ISSN
- 0031-9007
- Publication date
- 09-2014
- Peer reviewed
- Yes
- Austrian Fields of Science 2012
- 210006 Nanotechnology, 103018 Materials physics, 103008 Experimental physics, 103009 Solid state physics
- Keywords
- ASJC Scopus subject areas
- Physics and Astronomy(all)
- Portal url
- https://ucris.univie.ac.at/portal/en/publications/siliconcarbon-bond-inversions-driven-by-60kev-electrons-in-graphene(ac969940-cb70-43f8-984e-35d8d2dfd07f).html