Structural, Electrical, and UV Detection Properties of ZnO/Si Heterojunction Diodes

Author(s)
Shashikant Sharma, Bernhard C. Bayer, Viera Skakalova, Ghanshyam Singh, Chinnamuthan Periasamy
Abstract

This paper reports the structural, electrical, and ultraviolet (UV) light detection properties of n-ZnO/p-Si heterojunction diodes. The ZnO nanocrystalline thin films were deposited over p-Si (100) substrates using RF sputter deposition. The structural and surface morphological properties of the deposited films were studied using X-ray diffractometry, atomic force microscopy, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. Results confirm the preferred c-axis growth of the nanocrystalline films with hexagonal wurtzite structure. The junction properties of ZnO/Si heterojunction diodes were investigated using current-voltage and capacitance-voltage measurements. The fabricated diodes exhibit a high rectification ratio of similar to 840 at +/- 5 V. The ideality factor of the fabricated diodes was found to decrease from 3.2 to 1.7 when measurement temperature was increased from 303 to 403 K, whereas the barrier height increased from 0.74 to 0.96 eV in the same temperature range. Various other parameters, such as built-in potential, donor concentration, and depletion width, have also been evaluated. The UV detection properties of our fabricated structures were investigated using a UV lamp of 365-nm wavelength. The fabricated diodes show a very good response toward UV light. The values of responsivity and detectivity were found to be 0.35 A/W and 4.16 x 10(9) mHz(1/2)W(-1), respectively.

Organisation(s)
Physics of Nanostructured Materials
Journal
IEEE Transactions on Electron Devices
Volume
63
Pages
1949-1956
No. of pages
8
ISSN
0018-9383
DOI
https://doi.org/10.1109/TED.2016.2540721
Publication date
05-2016
Publication status
Published
Peer reviewed
Yes
Austrian Fields of Science 2012
103020 Surface physics, 103009 Solid state physics
Keywords
Electrical characterization, RF sputtering, thin films, ultraviolet (UV) detection, ZnO/Si heterojuction, LIGHT-EMITTING-DIODES, OPTOELECTRONIC DEVICE APPLICATIONS, RF-SPUTTERING TECHNIQUE, THIN-FILMS, ULTRAVIOLET PHOTODETECTORS, SI, ELECTROLUMINESCENCE, PHOTODIODES, INTERFACES, SURFACE
Portal url
https://ucris.univie.ac.at/portal/en/publications/structural-electrical-and-uv-detection-properties-of-znosi-heterojunction-diodes(a67d8bab-f374-48c4-bc49-75b2b9995c1e).html