Impact of graphene polycrystallinity on the performance of graphene field-effect transistors
- Author(s)
- David Jimenez, Aron W. Cummings, Ferney Chaves, Dinh Van Tuan, Jani Kotakoski, Stephan Roche
- Abstract
We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices.
- Organisation(s)
- Physics of Nanostructured Materials
- External organisation(s)
- Universitat Autònoma de Barcelona , Catalan Institute of Nanoscience and Nanotechnology (ICN2), Institució Catalana de Recerca i Estudis Avançats (ICREA), University of Helsinki
- Journal
- Applied Physics Letters
- Volume
- 104
- No. of pages
- 4
- ISSN
- 0003-6951
- Publication date
- 01-2014
- Peer reviewed
- Yes
- Austrian Fields of Science 2012
- 1030 Physics, Astronomy, 103018 Materials physics
- Keywords
- ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Portal url
- https://ucris.univie.ac.at/portal/en/publications/impact-of-graphene-polycrystallinity-on-the-performance-of-graphene-fieldeffect-transistors(7ebfbe23-2698-42e0-af7c-b3833211aa06).html