Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

Author(s)
J. Provine, Peter Schindler, Jan Torgersen, Hyo Jin Kim, Hans-Peter Karnthaler, Fritz B. Prinz
Abstract

Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO2, ZrO2, and HfO2 by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ALD (PEALD) have been demonstrated with TDMA-metal precursors. While the reactions of TDMA-type precursors with water and oxygen plasma have been studied in the past, their reactivity with pure O-2 has been overlooked. This paper reports on experimental evaluation of the reaction of molecular oxygen (O-2) and several metal organic precursors based on TDMA ligands. The effect of O-2 exposure duration and substrate temperature on deposition and film morphology is evaluated and compared to thermal reactions with H2O and PEALD with O-2 plasma.

Organisation(s)
Physics of Nanostructured Materials
External organisation(s)
Stanford University
Journal
Journal of vacuum science & technology a
Volume
34
No. of pages
5
ISSN
0734-2101
DOI
https://doi.org/10.1116/1.4937991
Publication date
01-2016
Peer reviewed
Yes
Austrian Fields of Science 2012
103018 Materials physics
Keywords
ASJC Scopus subject areas
Condensed Matter Physics, Surfaces, Coatings and Films, Surfaces and Interfaces
Portal url
https://ucris.univie.ac.at/portal/en/publications/atomic-layer-deposition-by-reaction-of-molecular-oxygen-with-tetrakisdimethylamidometal-precursors(6f1dc401-aa86-41ce-809d-e36c87998bb7).html