Vanishing influence of the band gap on the charge exchange of slow highly charged ions in freestanding single-layer MoS<sub>2</sub>

Author(s)
S. Creutzburg, J. Schwestka, A. Niggas, H. Inani, M. Tripathi, A. George, R. Heller, R. Kozubek, L. Madauss, N. McEvoy, S. Facsko, J. Kotakoski, M. Schleberger, A. Turchanin, P. L. Grande, F. Aumayr, R. A. Wilhelm
Organisation(s)
Physics of Nanostructured Materials
External organisation(s)
Helmholtz-Zentrum Dresden-Rossendorf, Technische Universität Dresden, Technische Universität Wien, Friedrich-Schiller-Universität Jena, Universität Duisburg-Essen, University of Dublin, Universidade Federal do Rio Grande do Sul
Journal
Physical Review B
Volume
102
No. of pages
8
ISSN
2469-9950
DOI
https://doi.org/10.1103/PhysRevB.102.045408
Publication date
07-2020
Peer reviewed
Yes
Austrian Fields of Science 2012
103015 Condensed matter, 103018 Materials physics
Keywords
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Portal url
https://ucris.univie.ac.at/portal/en/publications/vanishing-influence-of-the-band-gap-on-the-charge-exchange-of-slow-highly-charged-ions-in-freestanding-singlelayer-mos2(089161d9-dd88-48a3-b267-13e883f3a2e5).html