Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in Silicon

Author(s)
Alexander Markevich, Bethany M. Hudak, Jacob Madsen, Jiaming Song, Paul C. Snijders, Andrew R. Lupini, Toma Susi
Abstract

The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the manipulation of surface atoms, but at a disadvantage due to their need to bring a physical tip into contact with the sample. This has prompted interest in electron-beam techniques, followed by the first proof-of-principle experiment of bismuth dopant manipulation in crystalline silicon. Here, we use first-principles modeling to discover a novel indirect exchange mechanism that allows electron impacts to non-destructively move dopants with atomic precision within the silicon lattice. However, this mechanism only works for the two heaviest group V donors with split-vacancy configurations, Bi and Sb. We verify our model by directly imaging these configurations for Bi and by demonstrating that the promising nuclear spin qubit Sb can be manipulated using a focused electron beam.

Organisation(s)
Physics of Nanostructured Materials
External organisation(s)
U.S. Naval Research Laboratory, Northwestern University, Xi'an, Oak Ridge National Laboratory
Journal
Journal of Physical Chemistry C
Volume
125
Pages
16041–16048
No. of pages
8
ISSN
1932-7447
Publication date
07-2021
Peer reviewed
Yes
Austrian Fields of Science 2012
103042 Electron microscopy, 103043 Computational physics, 103018 Materials physics, 103009 Solid state physics
Keywords
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials, Energy(all), Surfaces, Coatings and Films, Physical and Theoretical Chemistry
Portal url
https://ucris.univie.ac.at/portal/en/publications/mechanism-of-electronbeam-manipulation-of-singledopant-atoms-in-silicon(059cb43c-9495-4ef7-abda-4378a6faec7b).html