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Highly individual SWCNTs for high performance thin film electronics

Authors/others:Kaskela, Antti (Aalto University) Laiho, Patrik (Aalto University) Fukaya, Norihiro (Nagoya University) Mustonen, Kimmo (Aalto University) Susi, TomaJiang, Hua (Aalto University) Houbenov, Nikolay (Aalto University) Ohno, Yutaka (Nagoya University) Kauppinen, Esko I. (Aalto University)

We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Ω/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Ω/sq. at 97% transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm2 V-1s-1 and ON/OFF-ratios up to 106.

Number of pages:7
Date of publication:1.7.2016
Journal title:Carbon
Digital Object Identifier (DOI):http://dx.doi.org/10.1016/j.carbon.2016.02.099
Publication Type:Article
Research Group Physics of Nanostructured Materials
Faculty of Physics

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